The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2001
Filed:
Sep. 09, 1998
Kunihiro Kasai, Yokohama, JP;
Hisato Oyamatsu, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A gate electrode is formed in an element region of a semiconductor substrate. By ion implantation using the gate electrode as the mask, a low density doping (LDD) region is formed. By ion implantation after forming a side wall insulating film on the side wall of the gate electrode, source and drain regions are formed. Afterwards, by varying the thickness of the side wall insulating film of the side wall of the gate electrode, that is, by reducing the thickness of the side wall insulating film, a sufficient silicide region is formed on the source and drain regions. A silicide layer is formed on the gate electrode and source and drain regions by thermal reaction between a refractory metal and silicon in the gate electrode or in the semi-conductor substrate.