The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2001

Filed:

Mar. 20, 1998
Applicant:
Inventor:

LinLin Chen, Kalispell, MT (US);

Assignee:

Semitool, Inc., Kalispell, Inc., MT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D 5/02 ; H01L 2/1288 ; H01L 2/1445 ;
U.S. Cl.
CPC ...
C25D 5/02 ; H01L 2/1288 ; H01L 2/1445 ;
Abstract

A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.


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