Method for producing low defect silicon single crystal doped with nitrogen

Abstract

There is disclosed a method for producing a silicon single crystal by growing the silicon single crystal by the Czochralski method, characterized in that the crystal is pulled at a pulling rate [mm/min] within a range of from V,to V,+0.062×G while the crystal is doped with nitrogen during the growing, where G [K/mm] represents an average temperature gradient along the crystal growing direction, which is for a temperature range of from the melting point of silicon to 1400° C., and provided in an apparatus used for the crystal growing, and V1 [mm/min] represents a pulling rate at which an OSF ring disappears at the center of the crystal when the crystal is pulled by gradually decreasing the pulling rate. The method of the present invention can produce silicon single crystal wafers exhibiting an extremely low defect density over the entire plane of the crystal, in particular, with no small pits, and having an excellent oxide dielectric breakdown voltage, based on the CZ method under widely and easily controllable production conditions at a high production rate and high productivity.