The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Sep. 30, 1998
Harald Gossner, München, DE;
Matthias Stecher, Villach, AT;
Werner Schwetlick, Gröbenzell, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An integrated semiconductor circuit has a protection structure for protecting against electrostatic discharge. The protection element has at least one integrated vertical protection transistor, whose load path is connected between the terminal pad and a potential rail. The base of the vertical npn bipolar transistor is controlled by a diode at breakdown, whose breakdown voltage is above the holding voltage of the npn bipolar transistors. By suitably choosing the location of the base contact, of the pn junction of the breakdown diode, and of the emitter, a desired adjustment of the trigger current is possible. Thus a variation in the voltage drop at the base is achieved which enables a current flow. The signal voltage requirements can be met and at the same time, an optimization of the ESD strength is achieved. The control or trigger sensitivity of the base can also be adjusted by means of an integrated resistor, which is disposed in the base zone.