The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Jul. 05, 2000
Applicant:
Inventors:
Chih-Wei Hung, Kaohsiung, TW;
Chi-Jen Shih, Kaohsiung, TW;
Assignee:
Taiwan Semiconductor Mfg. Co. Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract
A method for fabricating the floating gate of a split-gate flash memory. A patterned sacrificial layer is formed over a substrate. A doped polysilicon layer and an insulation layer are formed in sequence over the sacrificial layer. The doped polysilicon layer and the insulation layer above the sacrificial layer are removed by chemical-mechanical polishing. The exposed doped polysilicon layer is removed. Finally, the sacrificial layer is removed to complete the fabrication of the floating gate.