The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Oct. 04, 1999
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method is disclosed to form a shallow trench isolation (STI) having reduced junction leakage by avoiding undercutting near the shoulder of the trench. This is accomplished by using the pad oxide as a screen oxide and not removing it by wet dip etch as is normally practiced. Instead, an extra layer of low temperature oxide is added through thermal growth, and then the resulting composite is removed together with minimal undercutting at the shoulder corners of the trench. Subsequently, gate oxide is grown thermally to complete the forming of the STI.