The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Jun. 02, 1999
Cheng-Hung Chien, Yung-Ho, TW;
Chih-Hua Lee, Taoyuan, TW;
Abstract
A method of forming a CMOS sensor. Shallow first doped regions are formed in a provided substrate beside a gate electrode which is on the substrate. One of the shallow first doped region is defined as a source/drain area. Another of the shallow first doped region is defined as a sensor area. A spacer is formed on the sidewall of the gate electrode. A second doped region is formed within the predetermined sensor area by implanting. In the predetermined sensor area, the second doped region is deeper than the first doped region. The sensor region is composed of the first doped region and the second doped region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile