The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2001
Filed:
Jun. 27, 1997
Deepak K. Nayak, Santa Clara, CA (US);
Ming-Yin Hao, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming a retrograde channel concentration profile in the NMOS region of a semiconductor device and forming a shallow LDD regions in a PMOS region of the semiconductor device. The retrograde channel concentration profile in the NMOS regions is formed by implanting nitrogen and boron ions into the NMOS region at selected concentrations and implantation energy levels. The nitrogen ions are implanted in the NMOS region at a selected concentration in the range of 1×10,to 2×10,ions per cm,and at a selected implantation energy in the range of 10-100 KeV. The boron ions are implanted in the NMOS region at a selected concentration in the range of 1×10,to 1×10,ions per cm,and at a selected implantation energy in the range of 5-50 KeV. The shallow LDD regions in the PMOS region are formed by implanting nitrogen and boron ions into the PMOS region at selected concentrations and implantation energy levels. The nitrogen ions are implanted in the PMOS region at a selected concentration in the range of 1×10,to 2×10,ions per cm,and at a selected implantation energy in the range of 5-50 Kev. The boron ions are implanted in the PMOS region in a selected concentration in the range of 1×10,to 5×10,ions per cm,and at a selected implantation energy in the range of 10-20 KeV.