The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Feb. 08, 1999
Applicant:
Inventors:
Chien-Hua Tsai, Taichung, TW;
Kuo-Chi Lin, Lu-Chou, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/1311 ;
Abstract
A method of fabricating a node contact opening includes formation of a dielectric layer on a substrate. An opening is formed with C,F,/Ar/CH,F,as an etchant. A portion of the dielectric layer under the opening is etched with CHF,/CO as an etchant until the substrate is exposed. A node contact opening is formed.