The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Sep. 14, 1999
Mitsuru Taguchi, Tokyo, JP;
Shingo Kadomura, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Upon forming a groove and a connection hole by a dual damascene process, there is a problem in that the connection hole has a bowing shape, and it is difficult to form a shape of the connection hole in a good and stable manner. A process for producing a multi-layer wiring structure is provided, which comprises a step of forming an inter level dielectric film,covering a lower layer wiring,; a step of forming a connection hole,in the inter level dielectric film,to reach the lower layer wiring,; a step of forming an inter metal dielectric film,filling the connection hole,on the inter level dielectric film,, with an insulating material having an etching rate larger than an etching rate of the inter level dielectric film,; and a step of forming a concave part,in the inter metal dielectric film,, and selectively re-opening the connection hole,with respect to the inter level dielectric film in such a manner that the connection hole is continuous to the concave part