The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Feb. 09, 1999
Applicant:
Inventors:
Naoki Kasai, Tokyo, JP;
Hiroki Koga, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A semiconductor device includes a first diffusion layer, an insulating film, and an electrode. The first diffusion layer is formed on the surface of a first-conductivity-type semiconductor substrate and has an opposite conductivity type. The insulating film is formed on the first diffusion layer. The electrode is made of a conductor layer formed on the insulating film. The width of the electrode is smaller than a value twice the length by which an impurity doped into the surface of the semiconductor substrate, using the electrode as a mask, laterally diffuses during annealing to a position immediately below the electrode.