The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Jul. 23, 1999
Dapeng Wang, Boise, ID (US);
James Hofmann, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
In one aspect, the invention encompasses a method of forming a semiconductor device. A masking material is formed over a semiconductor substrate. A mold is provided, and the mold has a first pattern defined by projections and valleys between the projection. The masking material is pressed between the mold and the substrate to form a second pattern in the masking material. The second pattern is substantially complementary to the first pattern. The mold is removed from the masking material, and subsequently the masking material is utilized as a mask during etching of the semiconductor substrate. In another aspect, the invention encompasses a method of forming a field emission display. A first material layer is formed over a conductive substrate, and a masking material is formed over the first material layer. A mold is provided over the mask material, and the mask material is pressed between the mold and the first material layer to pattern the masking material. The pattern is transferred from the masking material to the first material layer. The patterned first material layer is then used as a second mask, and the conductive substrate is etched to form a plurality of conically shaped emitters. A display screen is formed in a spaced relation to such emitters.