The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Sep. 25, 1998
Applicant:
Inventors:
Mark W. Michael, Cedar Park, TX (US);
John L. Nistler, Martindale, TX (US);
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/126 ;
U.S. Cl.
CPC ...
G01R 3/126 ;
Abstract
The present invention is directed to a method for determining changes in electrical characteristics of semiconductor devices due to the fabrication of the devices in proximity to other devices or structures. The method comprises fabricating a plurality of semiconductor devices configured in a series arrangement and biasing all but one of the semiconductor devices to an active state. Thereafter, the remaining semiconductor device is biased to an active state and the electrical characteristics of the last semiconductor device is monitored.