The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2001

Filed:

Jun. 24, 1998
Applicant:
Inventors:

Alexander Kalnitsky, San Francisco, CA (US);

Frank Randolph Bryant, Denton, TX (US);

Marco Sabatini, Berkeley, CA (US);

Assignee:

STMicroelectronics, Inc., Carrollton, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/700 ;
U.S. Cl.
CPC ...
H01L 2/700 ;
Abstract

Disclosed is a CMOS image sensor that includes pixels employing a radiation-sensitive resistive element in which the resistance of the element changes in response to the quantity of radiation striking it. The resistive elements are made from an appropriately doped polycrystalline semiconductor material such as polysilicon. The pixels are provided on a semiconductor device in which the photosensitive resistive elements are provided on a first layer and the pixel associated transistors are provided on a second layer. The fill factor may be approach 100 percent for such pixels.


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