The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Dec. 19, 1997
Applicant:
Inventor:
Yvon Gris, Tullins, FR;
Assignee:
SGS-Thomson Microelectroncis S.A., Gentilly, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18222 ;
U.S. Cl.
CPC ...
H01L 2/18222 ;
Abstract
The present invention relates to a method of manufacturing a capacitor in a BICMOS integrated circuit manufacturing technology, including the steps of depositing, on a thick oxide region, a polysilicon layer corresponding to a MOS transistor gate electrode; successively depositing a base polysilicon layer and a silicon oxide layer; forming an opening in these last two layers; performing a thermal anneal in an oxidizing atmosphere; depositing a silicon nitride layer and a spacer polysilicon layer; depositing an emitter polysilicon layer; and making a contact with the base polysilicon layer and a contact with the emitter polysilicon layer.