The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Aug. 07, 1998
Nobuyasu Negishi, Tsurugashima, JP;
Kiyohide Ogasawara, Tsurugashima, JP;
Takamasa Yoshikawa, Tsurugashima, JP;
Takashi Chuman, Tsurugashima, JP;
Shingo Iwasaki, Tsurugashima, JP;
Hiroshi Ito, Tsurugashima, JP;
Atsushi Yoshizawa, Tsurugashima, JP;
Takashi Yamada, Tsurugashima, JP;
Shuuichi Yanagisawa, Tsurugashima, JP;
Kazuto Sakemura, Tsurugashima, JP;
Pioneer Electronic Corporation, Tokyo, JP;
Abstract
An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of hydrogenated amorphous silicon. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.