The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Mar. 05, 1999
Abstract
A method for forming a high aspect ration (HAR>4:1) borderless contact hole is described. The method forms a contact/via hole in the silicon oxide layer by performing an etching process with an etchant, C,F,/C,F,,/Ar/CO or C,F,/Ar/CO, on an etcher. The etcher includes a ring, a roof, a chiller and a chamber. The etchant used in the etching process is controlled under conditions including a C,F,flow of about 10 to 20 sccm, a CO flow of about 1 to 100 sccm, and an Ar flow of about 100 to 500 sccm. The flow of C,F,is about 0.5 to 1.5 times that of C,F,. The conditions of the etcher include a roof temperature of about 150 to 300° C., a chiller temperature of about −20 to 20° C., a wall temperature of about 150 to 400° C., a ring temperature of about 150 to 400° C., and a pressure within the chamber of about 4 to 50 mtorr. By controlling the chamber pressure and the deposition rate of the polymer molecules, a properly profiled contact hole is obtained.