The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Mar. 02, 1998
Chen-Hui Chung, Chu Tung Chen, TW;
Bing-Chang Wu, Shu Lin, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
The present invention is a method for preventing the peeling phenomena of the Tungsten metal in the integrated circuit after the metal-etching process. A semiconductor's substrate is provided. An integrated circuit is manufactured in the substrate. An intermetal-dielectric layer is formed on the substrate and it has the contacting holes and the verniers. A barrier layer is also formed on the intermetal-dielectric layer. A tungsten-metal layer is then deposited on the barrier layer. The barrier layer and the tungsten-metal layer are etched back to form the plugs of the contacting holes, the spacers of the vernier and the metal stoppers, which cover the edges of the verniers. Thus, the metal stoppers have a good adhesion with the barrier layer and the peeling of the tungsten spacer is prevented.