The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2001
Filed:
Jul. 07, 1999
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device geometrical pattern correction process, semiconductor device manufacturing process and geometrical pattern extraction process are provided, which make it possible to eliminate the adverse effect of corner rounding accompanying miniaturization, that is, a decrease in the projection amount of a gate, while avoiding increased chip area. The correction process comprises a step,of detecting a concave diffusion layer corresponding portion and a step,of correcting either the concave diffusion layer corresponding portion or a transistor gate corresponding portion which projects from the concave diffusion layer corresponding portion in order to ensure the projection of the gate from the concave diffusion layer corresponding portion against possible corner rounding.