The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
May. 06, 1999
Applicant:
Inventor:
Francois Hebert, San Mateo, CA (US);
Assignee:
Spectrian Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
A method of forming high quality inductors and capacitors in semiconductor integrated circuits utilizes one or more sealed air-gaps in a supporting substrate under the passive devices. The process is compatible with standard silicon processing and can be implemented with high temperature processing at the beginning, middle, or end of an integrated circuit fabrication process. A one micron air-gap in a high resistivity epitaxial layer results in a parasitic capacitance equivalent to 3.9 micron thick silicon oxide or a 11 micron thick depletion layer in silicon.