The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Dec. 05, 1997
Akira Okutoh, Kobe, JP;
Masaya Nagata, Nara, JP;
Shun Mitarai, Tenri, JP;
Yasuyuki Itoh, Yokohama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In a semiconductor storage device in a stack structure wherein a capacitor section having an upper electrode, a dielectric layer, and a lower electrode is connected with a transistor section by a plug, the lower electrode is formed in contact with the plug. The lower electrode is formed of at least an oxide of a platinum-rhodium alloy. In addition to the oxide of a platinum-rhodium alloy, platinum and/or a platinum-rhodium alloy can be used as materials for forming the lower electrode. The plug is formed of polysilicon or tungsten. When the plug is formed of polysilicon, the lower electrode is formed by sequentially laminating, for example, a film of the oxide of the platinum-rhodium alloy, a film of the platinum-rhodium alloy, and a film of the oxide of the platinum-rhodium alloy on the plug.