The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Dec. 15, 1998
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for forming a contact hole in a silicon oxide layer formed over a silicon nitride layer and a substrate performs an etching process with an etchant, C,F,/Ar or C,F,/C,F,/Ar, on an inductively coupled plasma etcher. The inductively coupled plasma etcher contains a chamber, a ring, and a roof. The etchant used in the etching process is controlled by conditions that include a C,F,flow of about 10 to 20 sccm, a CO flow of less than about 100 sccm, and an Ar flow of about 50 to 500 sccm. In the meantime, the conditions of the inductively coupled plasma etcher include a roof temperature of about 150 to 300 ° C., a ring temperature of about 150 to 400 ° C., and a pressure within the chamber of about 4 to 50 mtorr. By performing a plasma etching process under the foregoing conditions, a properly profiled contact hole is obtained.