The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Nov. 05, 1998
Chen-Chung Hsu, Taichung, TW;
United Microelectronics Corp,, Hsinchu, TW;
Abstract
The present invention provides an improved method of forming a dual damascene structure. Patterns of a metallic trench and a via hole are formed by using the photolithography process twice. After the first etching step of the dielectric layer the first photoresist layer is not removed. Thus, the first photoresist layer is used with the second photoresist layer as masks in the second etching step of the dielectric layer. The self-aligned method of forming a dual damascene structure thus is provided. In addition, a titanium layer or a titanium nitride layer can be formed on the dielectric layer after the first etching step of the dielectric layer and is used as an anti-reflection layer.