The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Aug. 12, 1997
Mari Otsuka, Kawaski, JP;
Kenichi Otsuka, Kawaski, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed are an apparatus and a method for manufacturing a semiconductor device. A Si wafer set within an L/UL chamber is transferred under the state of a high vacuum through a transfer chamber into a Ti chamber. The wafer is heated to at least 300° C. within the Ti chamber by a heating mechanism arranged within the Ti chamber. Then, a TiSi,film is formed at a bottom portion of a contact hole by a plasma CVD method using an Ar gas supplied through a gas line as a carrier gas and a TiCl,gas supplied through another gas line as a source gas, Ti in the source gas being self-aligned with Si in the wafer. The wafer having the TiSi,film formed therein is transferred through the transfer chamber into a W chamber without being exposed to the air atmosphere. Within the W chamber, a W film is consecutively deposited by a selective CVD method on the TiSi,film. The particular technique makes it possible to form the TiSi,film of a high quality at a bottom portion of the contact hole even if the contact hole has a large aspect ratio.