The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Oct. 30, 1998
Applicant:
Inventors:
Assignee:
United Semiconductor Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1425 ;
Abstract
A method of fabricating a high voltage semiconductor device. A semiconductor substrate doped with a first type dopant and comprising a gate is provided. A cap oxide layer is formed on the gate optionally. A first ion implantation with a light second type dopant at a wide angle is performed to form a lightly doped region. A spacer is formed on a side wall of the gate. A second ion implantation with a heavy second type dopant is performed, so that a heavily doped region is formed within the lightly doped region.