The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Jan. 08, 1999
Yau-Kae Sheu, Hsinchu, TW;
United Semiconductor Corp., Hsinchu, TW;
Abstract
A method for fabricating a flash memory is provided. The method contains sequentially forming a tunnel oxide layer, a first polysilicon layer, and a silicon nitride layer on a semiconductor substrate. A shallow trench isolation (STI) structure is formed in the substrate to define an active area. During the formation of the STI structure, the first polysilicon is simultaneously pre-patterned. The silicon nitride layer is removed. A dielectric layer and a second polysilicon layer are sequentially formed over the substrate. The second polysilicon layer, the dielectric layer, the first polysilicon layer, and the tunnel oxide layer are patterned to form a desired strip structure on the substrate. A remaining portion of the first polysilicon layer serves as a gate of a memory cell. An interchangeable source/drain region is formed by ion implantation at each side of the gate structure, in which a source line parallel to the strip remaining structure.