The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
May. 10, 1999
Applicant:
Inventors:
John T. Yue, Los Altos, CA (US);
Matthew S. Buynoski, Palo Alto, CA (US);
Yowjuang W. Liu, San Jose, CA (US);
Peng Fang, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ; H01L 2/122 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ; H01L 2/122 ;
Abstract
A field effect transistor is formed across a one or more trenches (,) or bars (,), thereby increasing the effective width of the channel region and the current-carrying capacity of the device.