The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Jun. 16, 1999
Yoshiaki Hagi, Itami, JP;
Ryusuke Nakai, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2×10,cm,, a carbon concentration of 2.5 to 20.0×10,cm,, a boron concentration of 2.0 to 20.0×10,cm,, an impurity concentration other than carbon and boron of at most 1×10,cm,, an EL2 concentration of 5.0 to 10.0×10,cm,, resistivity of 1.0 to 5.0×10,&OHgr;·cm and a mean residual strain measured by photoelastic analysis of at most 1.0×10,.