The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Jan. 07, 2000
Akira Ishikawa, Royse City, TX (US);
Atsuyuki Fukano, Tokyo, JP;
Shunsuke Yasutaka, late of Tsuchiura, JP;
Ball Semiconductor, Inc., Allen, TX (US);
Abstract
The present invention discloses a magnetic random access memory (MRAM). It improves upon conventional RAM designs by memorizing a logic bit value through magnetizing ferromagnetic material layer near the intersection of a specific word line and bit line. A write operation and an erase operation can be performed by changing direction of current flow on the bit line and word line. A read operation can be performed by monitoring an output current signal from an input current signal. A multiple layer design can be done on a silicon substrate to implement the MRAM by appropriately arranging the layers for the bit line, the word line, and the ferromagnetic material layer.