The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2001

Filed:

Jan. 25, 1999
Applicant:
Inventor:

Toyokazu Nakamura, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 2/186 ;
U.S. Cl.
CPC ...
G01N 2/186 ;
Abstract

A testing apparatus for an opening state of a hole in a semiconductor device includes a laser light radiating system. The semiconductor device has the conductive layer and the insulating layer formed on the conductive layer, and the hole is formed in the insulating layer at aim to reach the conductive layer. The laser light radiating system radiates to a hole, a laser light having a wave length determined based on a work function of a material of a conductive layer and a work function of a material of an insulating layer. A detector detects photoelectrons emitted through a portion of the hole to which the laser light is irradiated. A charge supplementing mechanism supplies electrons to the conductive layer.


Find Patent Forward Citations

Nakamura, Toyokazu. (2001). Apparatus method for testing opening state for hole in semiconductor device (U.S. Patent No. 6177681). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6177681

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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