The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2001
Filed:
Mar. 26, 1999
Seiji Samukawa, Tokyo, JP;
Kenichirou Tsuda, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
To produce a desirable amount of desirable radical and/or ion in treating a substrate such as etching the substrate, depositing a thin film on the substrate and the like by using plasma and the like. As a treating gas, a gas such as CFmIn and the like containing both a strongly bonded halogen element (F etc.) and weakly bonded halogen element (I etc.) is used. A substrate is treated by active species produced by exciting the treating gas by an excitation means capable of providing an energy which cannot dissociate the strong bond but can dissociate the weak bond. Preferable excitation means is capable of emitting a monochromatic irradiation, having a single value of excitation energy, such as electron beam, light etc., or otherwise capable of providing plasma, having a peak energy value of electrons and sharp electron energy distribution, such as UHF plasma etc.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile