The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Apr. 06, 1998
Rabiul Islam, Austin, TX (US);
Avgerinos V. Gelatos, Redwood City, CA (US);
Kevin Lucas, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
Ramnath Venkatraman, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
In one embodiment, a copper interconnect structure is formed by depositing a dielectric layer (,) on a semiconductor substrate (,). The dielectric layer (,) is then patterned to form interconnect openings (,). A layer of copper (,) is then formed within the interconnect openings (,). A portion of the copper layer (,) is then removed to form copper interconnects (,) within the interconnect openings (,). A copper barrier layer (,) is then formed overlying the copper interconnects (,). Adhesion between the copper barrier layer (,) and the copper interconnects (,) is improved by exposing the exposed surface of the copper interconnects (,) to a plasma generated using only ammonia as a source gas.