Method for fabricating a self aligned contact using a reverse self aligned contact etch

Abstract

This invention provides a method for forming a self aligned contact using a reverse self aligned contact etch process. A substrate structure is provided having conductive structures thereon. The conductive structures can be any of a number of structures including, but not limited to: floating gate transistors, capacitors, word lines, or a combination thereof. The substrate structure also has doped regions thereon adjacent to one or both sides of the conductive structures. A polysilicon layer is formed over the conductive structures and the doped regions. A photoresist mask is formed over the polysilicon layer having openings over the conductive structures. The polysilicon layer is etched through the openings in the photoresist mask and stopping on the hard masks to form self aligned contacts over the doped regions. A dielectric layer is formed over the self aligned contacts and the conductive structures. The dielectric layer and the self aligned contacts are planarized.