The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2001

Filed:

Aug. 10, 1999
Applicant:
Inventors:

Shingo Kadomura, Kanagawa, JP;

Tomohide Jozaki, Kanagawa, JP;

Shinsuke Hirano, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

An apparatus,for manufacturing a semiconductor device capable of actually putting the low temperature etching technique into practical use is also provided, having a vacuum chamber,in which a specimen stage,having a cooling means is disposed at the inside and a plasma generation means for generating plasmas, in which a specimen, for example, semiconductor substrate W is processed by generating plasmas while controlling the temperature of the specimen W placed on a specimen stage,by cooling the specimen stage,by a cooling means. The cooling means uses a liquefied gas or a gas as a coolant, the flow channel for the coolant is formed by arranging in parallel a plurality of pipelines,having diameters different from each other at positions before flowing to the specimen stage, and the specimen stage,is cooled by flowing the coolant through the pipelines,. The cooling means is provided with a control means,for controlling the amount of the coolant caused to flow to each of the plurality of pipelines,respectively.


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