The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Aug. 24, 1998
Chen-Chung Hsu, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming damascene structure has a borderless via design. The method forms a first conductive line above a substrate structure, and then forms a first dielectric layer having a via opening that exposes a portion of the first conductive layer. Thereafter, a metallic plug electrically connected to the first conductive line is formed in the via opening. Next, an insulating layer and a second dielectric layer are sequentially formed over the first dielectric layer. Subsequently, the second dielectric and the insulating layer are patterned to form a trench. Then, portions of the insulating layer at the bottom of the trench are removed to form cavity regions. Finally, a second conductive line that connects electrically with the metallic plug is formed.