The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Jun. 08, 1998
Applicant:
Inventors:
Kuo-Tung Sung, Hsinchu, TW;
Yuru Chu, Hsinchu, TW;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A semiconductor device structure with differential field oxide thicknesses. A single field oxidation step produces a nitrided field oxide region (,) that is thinner than a non-nitrided field oxide region (,). The bird's beak (,) of the nitrided field oxide (,) encroaches less into the active cell region than the bird's beak (,) of the thicker non-nitrided field oxide (,). The differential field oxide thicknesses allow isolation of multi-voltage integrated circuit devices, such as flash memory devices, while increasing available active cell area for a given design rule.