The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
May. 26, 1999
Jung-Chao Chiou, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu City, TW;
Abstract
A method for forming a cylinder-shaped capacitor for dynamic random access memories (DRAMs) is disclosed. The method includes forming a silicon layer having a gap therein over a semiconductor substrate, followed by conformably forming a first dielectric layer on the silicon layer. Next, a second dielectric layer is formed on the first dielectric layer, filling the gap. After etching back the second dielectric layer, the first dielectric layer is removed until the silicon layer is exposed. Then the second dielectric layer is removed, and the silicon layer is etched using the first dielectric layer as a mask, thus forming a cylinder-shaped structure of the silicon layer over the substrate.