The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Mar. 31, 1999
Applicant:
Inventor:
Eiichi Iino, Gunma-ken, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/520 ;
U.S. Cl.
CPC ...
C30B 1/520 ;
Abstract
A method for producing a silicon single crystal by a Czochralski method comprises bringing a seed crystal into contact with a melt, performing a necking operation, and growing a single crystal ingot, wherein concentration of interstitial oxygen incorporated during the necking operation is 1 ppma (JEIDA) or more. The rate of success in making dislocation-free crystals is improved in a seeding method in which a necking operation is performed.
Iino, Eiichi. (2001). Method for producing silicon single crystal (U.S. Patent No. 6171392). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6171392
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile