The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Aug. 06, 1999
Applicant:
Inventors:
Yukimasa Saito, Sagamihara, JP;
Hiroyuki Yamamoto, Hino, JP;
Assignee:
Tokyo Electron Limited, Tokyo-To, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
F27B 9/12 ;
U.S. Cl.
CPC ...
F27B 9/12 ;
Abstract
In a method wherein semiconductor wafers are accommodated within a treatment furnace that has been heated beforehand to a predetermined temperature, the temperature within the treatment furnace is increased to a predetermined treatment temperature, and the semiconductor wafers are subjected to an oxidation treatment, the temperature-increasing step is performed under a reduced pressure. This makes it possible to suppress the formation of natural oxide films during the temperature-increasing step, and thus makes it possible to form an extremely thin film of a superior quality on the semiconductor wafer.