The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 2001

Filed:

Nov. 17, 1999
Applicant:
Inventors:

Yacov Malinovich, Tivon, IL;

Ephie Koltin, Givat Elah, IL;

Assignee:

Tower Semiconductor Ltd., Migdal Haemek, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7146 ; H01L 3/10232 ;
U.S. Cl.
CPC ...
H01L 2/7146 ; H01L 3/10232 ;
Abstract

A method for producing a back-illuminated CMOS image sensor including a matrix of pixels (e.g., CMOS APS cells) that are fabricated on a semiconductor substrate. The semiconductor substrate is secured to a protective substrate by an adhesive such that the processed (frontside) surface of the semiconductor substrate faces the protective substrate. With the protective substrate providing structural support, the exposed backside surface of the semiconductor substrate is then subjected to grinding and/or chemical etching, followed by optional chemical/mechanical processing, to thin the semiconductor substrate to a range of 10 to 15 microns. A transparent substrate (e.g., glass) is then secured to the backside surface of the semiconductor substrate, thereby sandwiching the semiconductor substrate between the transparent substrate and the protective substrate.


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