The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
Nov. 01, 1999
Tien-Jui Liu, Tai-Chung Hsien, TW;
Chun-Huang Chen, Chia-I Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
The present invention provides a method for enhancing the reliability of a dielectric layer of a semiconductor wafer. The dielectric layer is formed above a silicon element. First, the method implants argon ions with a dosage of around 10,˜10,ions/cm,and an energy of around 3˜50 KeV into the silicon element to form an ion implantation layer. Then, the dielectric layer is formed on a predetermined area of the silicon element. The ion implantation layer prevents oxygen ions, impurities and charge carriers from converging on the surface of the silicon element so as to enhance the reliability of the dielectric layer.