The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
Oct. 14, 1998
Applicant:
Inventors:
Assignee:
United Microelectronic Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ;
U.S. Cl.
CPC ...
H01L 2/1311 ;
Abstract
A LOCOS method uses a reagent mixed of etchant and oxidizer to simultaneously perform the step of forming the FOX layer and the step of removing a mask layer of the conventional LOCOS method. The applied temperature is about 950-1150° C. The etchant. such as a HF acid solution, is used to remove the mask layer, and the oxidizer, such as O,, is used to form the FOX layer on a silicon substrate.
Liu, Chuan. (2001). Method of local oxidation using etchant and oxidizer (U.S. Patent No. 6169035). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6169035
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile