The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
Mar. 30, 1999
Applicant:
Inventors:
G{umlaut over (u)}nther Schindler, M{umlaut over (u)}nchen, DE;
Walter Hartner, M{umlaut over (u)}nchen, DE;
Frank Hintermaier, M{umlaut over (u)}nchen, DE;
Carlos Mazure-Espejo, Zorneding, DE;
Assignee:
Infineon Technologies, AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ; H01L 2/100 ; H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/18242 ; H01L 2/100 ; H01L 2/176 ;
Abstract
A method for producing an integrated semiconductor memory configuration, in particular uses ferroelectric materials as storage dielectrics. A conductive connection between a first electrode of a storage capacitor and a selection transistor is produced only after deposition of the storage dielectric.