The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2001
Filed:
Feb. 05, 1999
Vladimir Rumennik, Los Altos, CA (US);
Donald R. Disney, Cupertino, CA (US);
Janardhanan S. Ajit, Sunnyvale, CA (US);
Power Integrations, Inc., Sunnyvale, CA (US);
Abstract
A method for making a high voltage insulated gate field-effect transistor having an insulated gate field-effect device structure with a source and a drain comprises the steps of forming the drain with an extended well region having one or more buried layers of opposite conduction type sandwiched therein. The one or more buried layers create an associated plurality of parallel JFET conduction channels in the extended portion of the well region. A minimal number of processing steps are required to form the parallel JFET conduction channels which provide the HVFET with a low on-state resistance.