The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Jun. 26, 1998
Rainer Florian Schnabel, Wappingers Falls, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A method for optically measuring layer thickness in accordance with the present invention includes the steps of providing a first metal layer on a semiconductor device structure, providing a second metal layer on the first metal layer, forming a dielectric layer over the second metal layer and directing light onto the structure such that light reflected from a surface of the dielectric layer and a surface of the second metal layer create an interference pattern from which the dielectric layer thickness is measured. A system for optically measuring layer thickness includes a semiconductor device to be measured. The semiconductor device includes a first metal layer, a second metal layer disposed on the first metal layer, the second metal layer having an arcuate shaped top surface and a dielectric layer disposed on the second metal layer. A means for directing and receiving light is also included wherein light is directed onto the semiconductor device such that light reflected from a surface of the dielectric layer and a surface of the second metal layer creates an interference pattern from which the dielectric layer thickness is measured.