The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Nov. 25, 1998
Chen-Chung Hsu, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a self-aligned contact forms at least a gate and a source/drain region on a substrate, wherein a cap layer is formed on top of the gate. First spacers are formed on sidewalls of the gate. Second spacers are formed to cover the first spacers and the source/drain region. A dielectric layer having an opening is formed over the substrate. A portion of the second spacers is exposed by the opening. The second spacers exposed by the opening are removed to form a concave region. The source/drain region is exposed by the concave region. A plug that can be electrically coupled to the source/drain region is formed in the opening and the concave region.