The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Oct. 30, 1998
King-Lung Wu, Tainan Hsien, TW;
Chuan-Fu Wang, Taipei Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a dual cylindrical capacitor on a semiconductor substrate having at least a device isolation structure and a transistor thereon is provided, wherein the transistor includes at least a gate and a source/drain region. A first insulation layer and a second insulation layer are formed on the substrate. An opening comprising an lower part penetrating through the first insulation layer and an upper part penetrating through the second insulation layer is formed to expose the source/drain region. A conductive layer is formed on the second insulation layer to fill the lower part of the opening and to cover a surface of the upper part of the opening. A spacer is formed on a part of the conductive layer on a side wall of the larger opening. A conductive spacer is formed on the spacer. The spacer is removed.