The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Nov. 19, 1998
Kow-Ming Chang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method is provided for fabricating a tunneling oxide layer over a semiconductor substrate with a textured surface. The method is suitable for a semiconductor substrate, such as a silicon substrate, having a polysilicon layer formed over the substrate. The method has several steps of performing a thermal oxidation process to over oxidize the polysilicon layer so as to form an interfacial oxide layer between the substrate and the polysilicon layer, which actually is oxidized as an oxide layer. Due to material property of polysilicon, a textured surface is naturally formed on a top of the substrate. After removing the oxide layer and the interfacial oxide layer, a tunneling oxide layer is formed over the substrate with the textured surface.