The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2000
Filed:
Nov. 20, 1998
Chen-Chung Hsu, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a static random access memory. A substrate having a gate is provided. A source/drain region is formed in the substrate beside the gate. A metal silicide layer is formed on the source/drain region and the gate region. A conductive line which is electrically coupled to the metal silicide layer on the source/drain region is formed over the substrate. A dielectric layer having a via is formed over the substrate. A portion of the conductive line is exposed by the via. A polysilicon conductive line is formed conformably to the via and the dielectric layer. The polysilicon conductive line is electrically coupled to the conductive line. An ion implantation is performed to form a poly load of the static random access memory.