The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2000
Filed:
Nov. 25, 1998
Applicant:
Inventors:
Diana M Schonauer, San Jose, CA (US);
Steven C Avanzino, Cupertino, CA (US);
Kai Yang, Fremont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438687 ; 438691 ; 438745 ; 438963 ;
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising acetic acid and ammonium fluoride. Embodiments include removing up to 60 .ANG., e.g. about 10 .ANG. to about 30 .ANG., of silicon oxide by immersing the wafer in a solution containing at least about 90 wt. % acetic acid and up to about 10 wt. % ammonium fluoride.